Abstract: n-SiOx Ny is an n·type wide-gap(Eg= 9eV)semiconductor material with double donor doping which was formed by using voltage and/or temperature stressing on insulation SiOxNy thin film and the insulator becomes semi-conductor when donor-like defect density reaches to 1.26 x 10^20 cm-3 and double donor-like energy levels coexist in n·SiOxNy. The currentvoltage characteristics can be described satisfactorily in terms of Fowler-Nordheim(F·N)tunneling current mechanism over the voltage range of much greater than 1V，and the barrier height decreases with increasing doping concentration.

Key words: SiOxNy，wide·gap semiconductor thin film grown on silicon heerojunction diode grown on silicon F-N tunne ling conduction mechanism, 硅基异质结二极管，FN隧道导电机制