Chin. J. Semicond. > 1985, Volume 6 > Issue 3 > 307-310
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贵金属与GaAs(110)界面上费米能级位置的测定

潘士宏 , Nathan Newman , T.Kendelewicz and W.G.Petro

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    Received: 20 August 2015 Revised: Online: Published: 01 March 1985

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      Article Navigation >  Journal of Semiconductors  > 1985  >  6(3): 307-310
      潘士宏, Nathan Newman, T.Kendelewicz, W.G.Petro. 贵金属与GaAs(110)界面上费米能级位置的测定[J]. 半导体学报(英文版), 1985, 6(3): 307-310.
      Citation:
      潘士宏, Nathan Newman, T.Kendelewicz, W.G.Petro. 贵金属与GaAs(110)界面上费米能级位置的测定[J]. 半导体学报(英文版), 1985, 6(3): 307-310.
      shu

      • Received Date: 2015-08-20

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