1 |
Finite element analysis of expansion-matched submounts for high-power laser diodes packaging
Yuxi Ni, Xiaoyu Ma, Hongqi Jing, Suping Liu
Journal of Semiconductors, 2016, 37(6): 064005. doi: 10.1088/1674-4926/37/6/064005
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2 |
Thermal simulation and analysis of flat surface flip-chip high power light-emitting diodes
Maoxing Chen, Chen Xu, Kun Xu, Lei Zheng
Journal of Semiconductors, 2013, 34(12): 124005. doi: 10.1088/1674-4926/34/12/124005
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3 |
Fluorescent SiC and its application to white light-emitting diodes
Satoshi Kamiyama, Motoaki Iwaya, Tetsuya Takeuchi, Isamu Akasaki, Mikael Syvajarvi, et al.
Journal of Semiconductors, 2011, 32(1): 013004. doi: 10.1088/1674-4926/32/1/013004
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4 |
Light extraction efficiency enhancement of GaN-based light emitting diodes by a ZnO current spreading layer
Yang Hua, Wang Xiaofeng, Ruan Jun, Li Zhicong, Yi Xiaoyan, et al.
Journal of Semiconductors, 2009, 30(9): 094002. doi: 10.1088/1674-4926/30/9/094002
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5 |
Chemical mechanical polishing of freestanding GaN substrates
Yan Huaiyue, Xiu Xiangqian, Liu Zhanhui, Zhang Rong, Hua Xuemei, et al.
Journal of Semiconductors, 2009, 30(2): 023003. doi: 10.1088/1674-4926/30/2/023003
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6 |
Hydrogen Sensors Based on AlGaN/GaN Back-to-Back Schottky Diodes
Wang Xinhua, Wang Xiaoliang, Feng Chun, Ran Junxue, Xiao Hongling, et al.
Journal of Semiconductors, 2008, 29(1): 153-156.
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7 |
Theoretical Simulation of Vertical HVPE Reactor and GaN Thick Film Growth
Ma Ping, Duan Yao, Wei Tongbo, Duan Ruifei, Wang Junxi, et al.
Chinese Journal of Semiconductors , 2007, 28(S1): 253-256.
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8 |
Characteristics of Metal-Semiconductor-Metal Photodetectors Based on GaN
Liu Wenbao, Sun Xian, Wang Xiaolan, Zhang Shuang, Liu Zongshun, et al.
Chinese Journal of Semiconductors , 2007, 28(S1): 588-590.
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9 |
Vertical Electrode Structure GaN Based Light Emitting Diodes
Kang Xiangning, Bao Kui, Chen Zhizhong, Xu Ke, Zhang Bei, et al.
Chinese Journal of Semiconductors , 2007, 28(S1): 482-485.
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10 |
Analyses in Reliability of GaN-Based High Power Light Emitting Diodes
Chen Yu, Wang Liangchen, Yi Xiaoyan, Wang Libin, Liu Zhiqiang, et al.
Chinese Journal of Semiconductors , 2007, 28(S1): 500-503.
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11 |
Growth of GaN on Si(1 l 1) by Inserting 5AI/AIN Buffer Layer
Guo Lunchun, Wang Xiaoliang, Hu Guoxin, Li Jianping, Luo Weijun, et al.
Chinese Journal of Semiconductors , 2007, 28(S1): 234-237.
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12 |
0.25μm Gate-Length AlGaN/GaN Power HEMTs on Sapphire with fT of 77GHz
Zheng Yingkui, Liu Guoguo, He Zhijing, Liu Xinyu, Wu Dexin, et al.
Chinese Journal of Semiconductors , 2006, 27(6): 963-965.
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13 |
Dislocation Reduction in GaN on Sapphire by Epitaxial Lateral Overgrowth
Chen Jun, Wang Jianfeng, Wang Hui, Zhao Degang, Zhu Jianjun, et al.
Chinese Journal of Semiconductors , 2006, 27(3): 419-424.
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14 |
Characteristics of npn AlGaN/GaN HBT
Gong Xin, Ma Lin, Zhang Xiaoju, Zhang Jinfeng, Yang Yan, et al.
Chinese Journal of Semiconductors , 2006, 27(9): 1600-1603.
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15 |
Microstructure of an InGaN/GaN Multiple Quantum Well LED on Si (111) Substrate
Li Cuiyun, Zhu Hua, Mo Chunlan, Jiang Fengyi
Chinese Journal of Semiconductors , 2006, 27(11): 1950-1954.
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16 |
Optimization of the Electron Blocking Layer in GaN Laser Diodes
Li Ti, Pan Huapu, Xu Ke, Hu Xiaodong
Chinese Journal of Semiconductors , 2006, 27(8): 1458-1462.
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17 |
Light-Assisted Wet Etching of Dislocations in GaN Grown on Silicon
Zhao Liwei, Liu Caichi, Teng Xiaoyun, Hao Qiuyan, Zhu Junshan, et al.
Chinese Journal of Semiconductors , 2006, 27(6): 1046-1050.
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18 |
Fabrication and Emission Properties of a n-ZnO/p-GaN Heterojunction Light-Emitting Diode
Zhou Xin, Gu Shulin, Zhu Shunming, Ye Jiandong, Liu Wei, et al.
Chinese Journal of Semiconductors , 2006, 27(2): 249-253.
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19 |
Growth of GaN on γ-Al2O3/Si(001) Composite Substrates
Liu Zhe, Wang Junxi, Li Jinmin, Liu Hongxin, Wang Qiyuan, et al.
Chinese Journal of Semiconductors , 2005, 26(12): 2378-2384.
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20 |
Investigation of Undoped AlGaN/GaN Microwave Power HEMT
Zeng Qingming, Li Xianjie, Zhou Zhou, Wang Yong, Wang Xiaoliang, et al.
Chinese Journal of Semiconductors , 2005, 26(S1): 151-154.
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