Citation: |
Huang Xiaodong, Huang Jianqiu, Qin Ming, Huang Qing’an. A Novel Capacitive Pressure Sensor[J]. Journal of Semiconductors, 2008, 29(3): 428-432.
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Huang X D, Huang J Q, Qin M, Huang Q. A Novel Capacitive Pressure Sensor[J]. J. Semicond., 2008, 29(3): 428.
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A Novel Capacitive Pressure Sensor
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Abstract
A novel capacitive pressure sensor is presented,whose sensing structure is a solid-state capacitor consisting of three square membranes with Al/SiO2/n-type silicon.It was fabricated using pn junction self-stop etching combined with adhesive bonding,and only three masks were used during the process.Sensors with side lengths of 1000,1200,and 1400μm were fabricated,showing sensitivity of 1.8,2.3,and 3.6fF/hPa over the range of 410~1010hPa,respectively.The sensitivity of the sensor with a side length of 1500μm is 4.6fF/hPa,the nonlinearity is 6.4%,and the max hysteresis is 3.6%.The results show that permittivity change plays an important part in the capacitance change. -
References
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Proportional views