Chin. J. Semicond. > 1995, Volume 16 > Issue 1 > 31-35
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MOCVD GaInP材料本底浓度及其掺Zn时组分的控制

余庆选，彭瑞伍，励翠云

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    Received: 19 August 2015 Revised: Online: Published: 01 January 1995

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      Article Navigation >  Journal of Semiconductors  > 1995  >  16(1): 31-35
      余庆选，彭瑞伍，励翠云. MOCVD GaInP材料本底浓度及其掺Zn时组分的控制[J]. 半导体学报(英文版), 1995, 16(1): 31-35.
      Citation:
      余庆选，彭瑞伍，励翠云. MOCVD GaInP材料本底浓度及其掺Zn时组分的控制[J]. 半导体学报(英文版), 1995, 16(1): 31-35.
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      • Received Date: 2015-08-19

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