Chin. J. Semicond. > 2001, Volume 22 > Issue 8 > 975-978
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低压应用的高性能甚高频功率VDMOSFETs(英文)

刘英坤 , 梁春广 , 邓建国 , 张颖秋 , 郎秀兰 and 李思渊

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Key words: 低压, 梯形栅结构, 钼栅工艺, 甚高频功率VDMOSFET

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    Received: 20 August 2015 Revised: Online: Published: 01 August 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(8): 975-978
      刘英坤, 梁春广, 邓建国, 张颖秋, 郎秀兰, 李思渊. 低压应用的高性能甚高频功率VDMOSFETs(英文)[J]. 半导体学报(英文版), 2001, 22(8): 975-978.
      Citation:
      刘英坤, 梁春广, 邓建国, 张颖秋, 郎秀兰, 李思渊. 低压应用的高性能甚高频功率VDMOSFETs(英文)[J]. 半导体学报(英文版), 2001, 22(8): 975-978.
      shu

      • Received Date: 2015-08-20

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