Chin. J. Semicond. > 2005, Volume 26 > Issue 10 > 1939-1944
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GaN异质结的二维表面态

薛舫时

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Key words: 氮化物表面, 二维表面态, 极化吸附层, 电流崩塌

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    Received: 19 August 2015 Revised: Online: Published: 01 October 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(10): 1939-1944
      薛舫时. GaN异质结的二维表面态[J]. 半导体学报(英文版), 2005, 26(10): 1939-1944.
      Citation:
      薛舫时. GaN异质结的二维表面态[J]. 半导体学报(英文版), 2005, 26(10): 1939-1944.
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      • Received Date: 2015-08-19

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