Chin. J. Semicond. > 2001, Volume 22 > Issue 3 > 256-260
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等价掺杂转换理论预示扩散 -外延穿通P-N结的击穿电压和击穿峰值电场强度(英文)

何进 , 张兴 , 黄如 and 王阳元

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Key words: 扩散-外延穿通P-N结, 击穿电压, 击穿峰值电场强度, 等价掺杂转换方法

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    Received: 19 August 2015 Revised: Online: Published: 01 March 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(3): 256-260
      何进, 张兴, 黄如, 王阳元. 等价掺杂转换理论预示扩散 -外延穿通P-N结的击穿电压和击穿峰值电场强度(英文)[J]. 半导体学报(英文版), 2001, 22(3): 256-260.
      Citation:
      何进, 张兴, 黄如, 王阳元. 等价掺杂转换理论预示扩散 -外延穿通P-N结的击穿电压和击穿峰值电场强度(英文)[J]. 半导体学报(英文版), 2001, 22(3): 256-260.
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      • Received Date: 2015-08-19

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