| Citation: |
Lin Guoqiang, Zeng Yiping, Duan Ruifei, Wei Tongbo, Ma Ping, Wang Junxi, Liu Zhe, Wang Xiaoliang, Li Jinmin. Selective Area Growth and Characterization of GaN Grown on c-Sapphire by Hydride Vapor Phase Epitaxy[J]. Journal of Semiconductors, 2008, 29(3): 530-533.
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Lin G Q, Zeng Y P, Duan R F, Wei T B, Ma P, Wang J X, Liu Z, Wang X L, Li J M. Selective Area Growth and Characterization of GaN Grown on c-Sapphire by Hydride Vapor Phase Epitaxy[J]. J. Semicond., 2008, 29(3): 530.
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Selective Area Growth and Characterization of GaN Grown on c-Sapphire by Hydride Vapor Phase Epitaxy
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Abstract
Square patterns with different sizes are prepared on c-sapphire by plasma-enhanced chemical vapor deposition of SiO2,conventional optical lithography,and wet chemical etching.The GaN film is selectively grown on this patterned c-sapphire by hydride vapor phase epitaxy.An optical microscope,atomic force microscope,scanning electron microscope,high resolution double crystal X-ray diffraction (DCXRD),and Raman shift spectrum are used to analyze the sample.The GaN layer with a thickness of about 20μm grown on an area of 100μm×100μm is crack-free while the GaN layers grown on areas of 300μm×300μm and 500μm×500μm have cracks.Thus,the full width at half maximum (FWHM) of DCXRD of (0002) reflection of GaN grown on the independent square window of c-sapphire decreases when the area of window decreases,indicating better quality GaN single crystal.The minimum FWHM is 530" .From the corner of the square window towards its edge and center,the in-plane compressive stress of GaN decreases due to the interaction between the epitaxial lateral overgrown GaN wings and the SiO2 mask underneath,and the bending of 90° of threading dislocations at the border of the window regions.-
Keywords:
- GaN,
- selective area growth,
- HVPE
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References
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Proportional views
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