Chin. J. Semicond. > 1999, Volume 20 > Issue 1 > 30-34
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硅上超高真空CVD生长硅锗外延层及其特性研究

叶志镇 , 黄靖云 , 卢焕明 , 姜小波 , 汪雷 , 赵炳辉 and 阙端麟

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    Received: 20 August 2015 Revised: Online: Published: 01 January 1999

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      Article Navigation >  Journal of Semiconductors  > 1999  >  20(1): 30-34
      叶志镇, 黄靖云, 卢焕明, 姜小波, 汪雷, 赵炳辉, 阙端麟. 硅上超高真空CVD生长硅锗外延层及其特性研究[J]. 半导体学报(英文版), 1999, 20(1): 30-34.
      Citation:
      叶志镇, 黄靖云, 卢焕明, 姜小波, 汪雷, 赵炳辉, 阙端麟. 硅上超高真空CVD生长硅锗外延层及其特性研究[J]. 半导体学报(英文版), 1999, 20(1): 30-34.
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      • Received Date: 2015-08-20

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