Chin. J. Semicond. > 2000, Volume 21 > Issue 2 > 142-145
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用气态源分子束外延生长法制备Si/SiGe/Sinpn异质结双极晶体管

刘学锋 , 李晋闽 , 孔梅影 , 黄大定 , 李建平 and 林兰英

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Key words: 气源分子束外延, 异质结双极晶体管, 硅锗合金

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    Received: 20 August 2015 Revised: Online: Published: 01 February 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(2): 142-145
      刘学锋, 李晋闽, 孔梅影, 黄大定, 李建平, 林兰英. 用气态源分子束外延生长法制备Si/SiGe/Sinpn异质结双极晶体管[J]. 半导体学报(英文版), 2000, 21(2): 142-145.
      Citation:
      刘学锋, 李晋闽, 孔梅影, 黄大定, 李建平, 林兰英. 用气态源分子束外延生长法制备Si/SiGe/Sinpn异质结双极晶体管[J]. 半导体学报(英文版), 2000, 21(2): 142-145.
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      • Received Date: 2015-08-20

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