Chin. J. Semicond. > 1995, Volume 16 > Issue 3 > 170-176
|

CONTENTS

高精度双晶衍射（HRDCD）方法检测InGaAs／GaAs超薄应变层量子阱结构参数

王小军，庄岩，王玉田，庄婉如，王启明，黄美纯

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2223 Times PDF downloads: 741 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 March 1995

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1995  >  16(3): 170-176
      王小军，庄岩，王玉田，庄婉如，王启明，黄美纯. 高精度双晶衍射（HRDCD）方法检测InGaAs／GaAs超薄应变层量子阱结构参数[J]. 半导体学报(英文版), 1995, 16(3): 170-176.
      Citation:
      王小军，庄岩，王玉田，庄婉如，王启明，黄美纯. 高精度双晶衍射（HRDCD）方法检测InGaAs／GaAs超薄应变层量子阱结构参数[J]. 半导体学报(英文版), 1995, 16(3): 170-176.
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return