| Citation: |
Jia Renxu, Zhang Yimen, Zhang Yuming, Guo Hui. Gas Fluid Modeling of SiC Epitaxial Growth in Chemical Vapor Deposition Processes[J]. Journal of Semiconductors, 2007, 28(S1): 541-544.
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Jia R X, Zhang Y M, Zhang Y M, Guo H. Gas Fluid Modeling of SiC Epitaxial Growth in Chemical Vapor Deposition Processes[J]. Chin. J. Semicond., 2007, 28(S1): 541.
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Gas Fluid Modeling of SiC Epitaxial Growth in Chemical Vapor Deposition Processes
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Abstract
A gas fluid model for chemical vapor deposition processes is presented.Geometrical shape of susceptor has been designed based on the calculation and simulation with COMSOL program. The results show that the changes of susceptor shape have obvious effects on the distribution of gas fluid on the substrate.Gas fluid on the surface is uniformly distributed when the susceptor has a certain angle.This result is helpful for obtaining the high quality silicon carbide epitaxial layers. -
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