Chin. J. Semicond. > 2000, Volume 21 > Issue 4 > 317-324
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多晶硅超薄沟道薄膜晶体管研制(英文)

张盛东 , 韩汝琦 , 关旭东 , 刘晓彦 and 王阳元

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Key words: 薄膜晶体管, 多晶硅, kink效应, 超薄沟道

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    Received: 20 August 2015 Revised: Online: Published: 01 April 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(4): 317-324
      张盛东, 韩汝琦, 关旭东, 刘晓彦, 王阳元. 多晶硅超薄沟道薄膜晶体管研制(英文)[J]. 半导体学报(英文版), 2000, 21(4): 317-324.
      Citation:
      张盛东, 韩汝琦, 关旭东, 刘晓彦, 王阳元. 多晶硅超薄沟道薄膜晶体管研制(英文)[J]. 半导体学报(英文版), 2000, 21(4): 317-324.
      shu

      • Received Date: 2015-08-20

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