Chin. J. Semicond. > 1998, Volume 19 > Issue 3 > 214-217
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TiN覆盖层和Co/Ti/Si三元固相反应改善超薄CoSi_2高温稳定性

刘京 , 茹国平 , 顾志光 , 屈新萍 , 李炳宗 and 朱剑豪

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    刘京, 茹国平, 顾志光, 屈新萍, 李炳宗, 朱剑豪. TiN覆盖层和Co/Ti/Si三元固相反应改善超薄CoSi_2高温稳定性[J]. 半导体学报(英文版), 1998, 19(3): 214-217.
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    Received: 20 August 2015 Revised: Online: Published: 01 March 1998

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      Article Navigation >  Journal of Semiconductors  > 1998  >  19(3): 214-217
      刘京, 茹国平, 顾志光, 屈新萍, 李炳宗, 朱剑豪. TiN覆盖层和Co/Ti/Si三元固相反应改善超薄CoSi_2高温稳定性[J]. 半导体学报(英文版), 1998, 19(3): 214-217.
      Citation:
      刘京, 茹国平, 顾志光, 屈新萍, 李炳宗, 朱剑豪. TiN覆盖层和Co/Ti/Si三元固相反应改善超薄CoSi_2高温稳定性[J]. 半导体学报(英文版), 1998, 19(3): 214-217.
      shu

      • Received Date: 2015-08-20

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