Chin. J. Semicond. > 2005, Volume 26 > Issue 3 > 618-623

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Abstract: 应用原子级模型中的随机CA算法,针对硅材料和具体的工艺特点,构造了相应的函数,并在此基础上编制了应用软件——SSAE.该软件可独立运行,能够模拟出硅在KOH中不同腐蚀条件下腐蚀的过程和结果,并且克服了其他采用原子级模型的模拟软件中常出现的边界模糊等缺点.该结果与其他软件和实验结果相比,较为一致,并且该软件具有占用系统资源少、运行时间快等优点,具有一定的实用价值.

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    Received: 19 August 2015 Revised: Online: Published: 01 March 2005

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      姜岩峰, 黄庆安. 硅各向异性腐蚀的原子级模拟[J]. Journal of Semiconductors, 2005, 26(3): 618-623. ****硅各向异性腐蚀的原子级模拟[J]. Chin. J. Semicond., 2005, 26(3): 618.
      Citation:
      姜岩峰, 黄庆安. 硅各向异性腐蚀的原子级模拟[J]. Journal of Semiconductors, 2005, 26(3): 618-623. ****
      硅各向异性腐蚀的原子级模拟[J]. Chin. J. Semicond., 2005, 26(3): 618.

      硅各向异性腐蚀的原子级模拟

      • Received Date: 2015-08-19

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