Chin. J. Semicond. > 2003, Volume 24 > Issue 7 > 697-701
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离子注入4H-SiC MESFET器件的夹断电压(英文)

王守国 , 张义门 and 张玉明

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Key words: 碳化硅, 离子注入, MESFET, 夹断电压

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    Received: 20 August 2015 Revised: Online: Published: 01 July 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(7): 697-701
      王守国, 张义门, 张玉明. 离子注入4H-SiC MESFET器件的夹断电压(英文)[J]. 半导体学报(英文版), 2003, 24(7): 697-701.
      Citation:
      王守国, 张义门, 张玉明. 离子注入4H-SiC MESFET器件的夹断电压(英文)[J]. 半导体学报(英文版), 2003, 24(7): 697-701.
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      • Received Date: 2015-08-20

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