Correlation Between Er<sup>3+</sup> Emission and Microstructure of Erbium-Implanted a-SiO<sub>x</sub>∶H Film

CHEN Zhang-yong; CHEN Wei-de; WANG Yong-qian; SONG Shu-fang; XU Zhen-jia; GUO Shao-ling

Chin. J. Semicond. > 2002, Volume 23 > Issue 9 > 930-934

CONTENTS

Correlation Between Er³⁺ Emission and Microstructure of Erbium-Implanted a-SiO_x∶H Film

CHEN Zhang-yong, CHEN Wei-de, WANG Yong-qian, SONG Shu-fang, XU Zhen-jia and GUO Shao-ling

+ Author Affiliations

Abstract:

An investigation on the correlation between Er³⁺ emission and the microstructure of erbium implanted hydrogenated amorphous silicon oxide (a SiO_x ∶H) films is presented. FTIR spectra experimental results indicate that the a SiO_x ∶H films are a mixture of two phases, an hydrogenated amorphous SiO_x matrix and silicon rich domains embedded therein. The changes in the nonradiative centers in the silicon rich domains have a strong influence on Er³⁺ emission.

Key words: Er3+, SiOx, photoluminescence

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CHEN Zhang-yong, CHEN Wei-de, WANG Yong-qian, SONG Shu-fang, XU Zhen-jia, GUO Shao-ling. Correlation Between Er³⁺ Emission and Microstructure of Erbium-Implanted a-SiO_x∶H Film[J]. Journal of Semiconductors, 2002, 23(9): 930-934.

CHEN Zhang-yong, CHEN Wei-de, WANG Yong-qian, SONG Shu-fang, XU Zhen-jia, GUO Shao-ling, Correlation Between Er³⁺ Emission and Microstructure of Erbium-Implanted a-SiO_x∶H Film[J]. Journal of Semiconductors, 2002, 23(9), 930-934