Chin. J. Semicond. > 2001, Volume 22 > Issue 7 > 929-932
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一种适合制作CMOS的SiGePMOSFET

黎晨 , 朱培喻 , 罗广礼 , 陈培毅 and 钱佩信

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Key words: SiGePMOSFET, SiGeCMOS

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    Received: 20 August 2015 Revised: Online: Published: 01 July 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(7): 929-932
      黎晨, 朱培喻, 罗广礼, 陈培毅, 钱佩信. 一种适合制作CMOS的SiGePMOSFET[J]. 半导体学报(英文版), 2001, 22(7): 929-932.
      Citation:
      黎晨, 朱培喻, 罗广礼, 陈培毅, 钱佩信. 一种适合制作CMOS的SiGePMOSFET[J]. 半导体学报(英文版), 2001, 22(7): 929-932.
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      • Received Date: 2015-08-20

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