Chin. J. Semicond. > 2002, Volume 23 > Issue 11 > 1178-1181
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热退火γ-Al_2O_3/Si异质结构薄膜质量改进

谭利文 , 王俊 , 王启元 , 郁元桓 , 刘忠立 , 邓惠芳 , 王建华 and 林兰英

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Key words: γ-Al2O3, SOI, MOCVD, 退火

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    Received: 19 August 2015 Revised: Online: Published: 01 November 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(11): 1178-1181
      谭利文, 王俊, 王启元, 郁元桓, 刘忠立, 邓惠芳, 王建华, 林兰英. 热退火γ-Al_2O_3/Si异质结构薄膜质量改进[J]. 半导体学报(英文版), 2002, 23(11): 1178-1181.
      Citation:
      谭利文, 王俊, 王启元, 郁元桓, 刘忠立, 邓惠芳, 王建华, 林兰英. 热退火γ-Al_2O_3/Si异质结构薄膜质量改进[J]. 半导体学报(英文版), 2002, 23(11): 1178-1181.
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      • Received Date: 2015-08-19

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