Chin. J. Semicond. > 1999, Volume 20 > Issue 6 > 506-509

Multi-Wavelength InGaAsP Lasers Grown by LP-MOCVD Selective Area Growth Technology

Xu Guoyang , Yan Xuejin , Zhu Hongliang，Zhou Fan , Duan Lihong , Tian Huiliang，Bai Yunxia and Wang Wei

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Received: 20 August 2015 Revised: Online: Published: 01 June 1999

Article Navigation > Journal of Semiconductors > 1999 > 20(6): 506-509

Xu Guoyang, Yan Xuejin, Zhu Hongliang，Zhou Fan, Duan Lihong, Tian Huiliang，Bai Yunxia, Wang Wei. Multi-Wavelength InGaAsP Lasers Grown by LP-MOCVD Selective Area Growth Technology[J]. 半导体学报(英文版), 1999, 20(6): 506-509.

Citation:

Xu Guoyang, Yan Xuejin, Zhu Hongliang，Zhou Fan, Duan Lihong, Tian Huiliang，Bai Yunxia, Wang Wei. Multi-Wavelength InGaAsP Lasers Grown by LP-MOCVD Selective Area Growth Technology[J]. 半导体学报(英文版), 1999, 20(6): 506-509.

Xu Guoyang, Yan Xuejin, Zhu Hongliang，Zhou Fan, Duan Lihong, Tian Huiliang，Bai Yunxia, Wang Wei. Multi-Wavelength InGaAsP Lasers Grown by LP-MOCVD Selective Area Growth Technology[J]. 半导体学报(英文版), 1999, 20(6): 506-509.

Citation:

Xu Guoyang, Yan Xuejin, Zhu Hongliang，Zhou Fan, Duan Lihong, Tian Huiliang，Bai Yunxia, Wang Wei. Multi-Wavelength InGaAsP Lasers Grown by LP-MOCVD Selective Area Growth Technology[J]. 半导体学报(英文版), 1999, 20(6): 506-509.

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