Chin. J. Semicond. > 2007, Volume 28 > Issue S1 > 379-381
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Epitaxial Growth of 4H-SiC MESFET Structures

Li Zheyang, Dong Xun, Bai Song, Chen Gang, Chen Tangsheng and Chen Chen

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Abstract: Metalsemiconductor field effect transistor(MESFET)structures have been grown in a hot-walI CVD reactor. Using trimethylaluminium (TMA) and nitrogen，p-and n-type epitaxial layers were grown on n+substrates and semi insulating substrates.Thickness of epitaxial layer has been characterized using scanning electron microscopy，and doping concentration has been determined by using secondary ion mass spectrometry and Hg probe capacitance-voltage technique.Optimization of growth parameters has resulted in very abrupt doping profiles.The grown MESFET structures have been processed and parts of the transistor properties are presented.

Key words: 4H·SiC, MESFET, SEM, SIMS, Hg probe C-V

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    Received: 27 May 2016 Revised: Online: Published: 01 January 2007

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      Article Navigation >  Journal of Semiconductors  > 2007  >  28(S1): 379-381
      Li Zheyang, Dong Xun, Bai Song, Chen Gang, Chen Tangsheng, Chen Chen. Epitaxial Growth of 4H-SiC MESFET Structures[J]. Journal of Semiconductors, 2007, 28(S1): 379-381. ****Li Z Y, Dong X, Bai S, Chen G, Chen T S, Chen C. Epitaxial Growth of 4H-SiC MESFET Structures[J]. Chin. J. Semicond., 2007, 28(S1): 379.
      Citation:
      Li Zheyang, Dong Xun, Bai Song, Chen Gang, Chen Tangsheng, Chen Chen. Epitaxial Growth of 4H-SiC MESFET Structures[J]. Journal of Semiconductors, 2007, 28(S1): 379-381. ****
      Li Z Y, Dong X, Bai S, Chen G, Chen T S, Chen C. Epitaxial Growth of 4H-SiC MESFET Structures[J]. Chin. J. Semicond., 2007, 28(S1): 379.
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      Epitaxial Growth of 4H-SiC MESFET Structures

      • National Key Laboratory of Monolithic Integrated Circuits and Modules， Nanfing Electronic Devices Institute，Nanjing 210016，China,National Key Laboratory of Monolithic Integrated Circuits and Modules， Nanfing Electronic Devices Institute，Nanjing 210016，China,National Key Laboratory of Monolithic Integrated Circuits and Modules， Nanfing Electronic Devices Institute，Nanjing 210016，China,National Key Laboratory of Monolithic Integrated Circuits and Modules， Nanfing Electronic Devices Institute，Nanjing 210016，China,National Key Laboratory of Monolithic Integrated Circuits and Modules， Nanfing Electronic Devices Institute，Nanjing 210016，China and National Key Laboratory of Monolithic Integrated Circuits and Modules， Nanfing Electronic Devices Institute，Nanjing 210016，China

      • Received Date: 2016-05-27
      • Published Date: 2016-04-28

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