| Citation: |
Xia Yanqiu, Wu Shuxiang, Liu Yajing, Yu Xiaolong, Li Shuwei. Characterization of Diluted Magnetic Semiconductor Mn0.1Ti0.9O2-δ Thin Film Grown by Molecular Beam Epitaxy[J]. Journal of Semiconductors, 2007, 28(7): 1058-1062.
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Xia Y Q, Wu S X, Liu Y J, Yu X L, Li S W. Characterization of Diluted Magnetic Semiconductor Mn0.1Ti0.9O2-δ Thin Film Grown by Molecular Beam Epitaxy[J]. Chin. J. Semicond., 2007, 28(7): 1058.
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Characterization of Diluted Magnetic Semiconductor Mn0.1Ti0.9O2-δ Thin Film Grown by Molecular Beam Epitaxy
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Abstract
Diluted magnetic semiconductor Mn0.1Ti0.9O2-δ(MTO) thin film was grown successfully on SrTiO3(STO) substrate by oxygen plasma assisted molecular beam epitaxy (OPA-MBE).The crystalline structure,chemistry composition,optical absorption,and electrical conductivity properties of the thin film were characterized by X-ray diffraction (XRD),X-ray photoelectron spectrometry (XPS),ultraviolet and visible spectrophotometry (UV-Vis),and resistivity measuring instruments with a four-probe array.The MTO thin film has anatase and rutile crystal structures,and the absorption edge is shifted to the lower-energy.The electrical conductivity of the MTO thin film is evidently improved,and the resistivity is only 37.5Ω·m at room temperature. -
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