Chin. J. Semicond. > 2003, Volume 24 > Issue 5 > 504-509
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6H-SiC Schottky二极管的正向特性

尚也淳 , 刘忠立 and 王姝睿

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Key words: SiC, Schottky结, 势垒不均匀性, 界面层

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    Received: 20 August 2015 Revised: Online: Published: 01 May 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(5): 504-509
      尚也淳, 刘忠立, 王姝睿. 6H-SiC Schottky二极管的正向特性[J]. 半导体学报(英文版), 2003, 24(5): 504-509.
      Citation:
      尚也淳, 刘忠立, 王姝睿. 6H-SiC Schottky二极管的正向特性[J]. 半导体学报(英文版), 2003, 24(5): 504-509.
      shu

      • Received Date: 2015-08-20

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