Chin. J. Semicond. > 2001, Volume 22 > Issue 9 > 1154-1159
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短沟道SOI MOSFET总剂量辐照效应模型

万新恒 , 甘学温 , 张兴 , 黄如 and 王阳元

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Key words: SOIMOSFET, 总剂量辐照效应, 模型

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    Received: 20 August 2015 Revised: Online: Published: 01 September 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(9): 1154-1159
      万新恒, 甘学温, 张兴, 黄如, 王阳元. 短沟道SOI MOSFET总剂量辐照效应模型[J]. 半导体学报(英文版), 2001, 22(9): 1154-1159.
      Citation:
      万新恒, 甘学温, 张兴, 黄如, 王阳元. 短沟道SOI MOSFET总剂量辐照效应模型[J]. 半导体学报(英文版), 2001, 22(9): 1154-1159.
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      • Received Date: 2015-08-20

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