| Citation: |
Chen Jinhuo, Wang Yongshun, Zhu Haihua, Hu Jiaxing, Zhang Fujia. AFM and XPS Study on the Surface and Interface States of CuPc and SiO2 Films[J]. Journal of Semiconductors, 2006, 27(8): 1360-1366.
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Chen J H, Wang Y S, Zhu H H, Hu J X, Zhang F J. AFM and XPS Study on the Surface and Interface States of CuPc and SiO2 Films[J]. Chin. J. Semicond., 2006, 27(8): 1360.
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AFM and XPS Study on the Surface and Interface States of CuPc and SiO2 Films
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Abstract
A CuPc/SiO2 sample is fabricated.Its morphology is characterized by atomic force microscopy,and the electron states are investigated by X-ray photoelectron spectroscopy.In order to investigate these spectra in detail,all of these spectra are normalized to the height of the most intense peak,and each component is fitted with a single Gaussian function.Analysis shows that the O element has great bearing on the electron states and that SiO layers produced by spurting technology are better than those produced by oxidation technology. -
References
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Proportional views
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