Chin. J. Semicond. > 2001, Volume 22 > Issue 2 > 113-116

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InGaAs/GaAs多量子阱SEED面阵结构特性与设计(英文)

邓晖 , 陈弘达 , 梁琨 , 杜云 , 唐君 , 黄永箴 , 潘钟 , 马晓宇 , 吴荣汉 and 王启明

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Key words: 谐振腔, SEED, 面阵, 光电子器件

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    Received: 19 August 2015 Revised: Online: Published: 01 February 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(2): 113-116
      邓晖, 陈弘达, 梁琨, 杜云, 唐君, 黄永箴, 潘钟, 马晓宇, 吴荣汉, 王启明. InGaAs/GaAs多量子阱SEED面阵结构特性与设计(英文)[J]. 半导体学报(英文版), 2001, 22(2): 113-116.
      Citation:
      邓晖, 陈弘达, 梁琨, 杜云, 唐君, 黄永箴, 潘钟, 马晓宇, 吴荣汉, 王启明. InGaAs/GaAs多量子阱SEED面阵结构特性与设计(英文)[J]. 半导体学报(英文版), 2001, 22(2): 113-116.
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      • Received Date: 2015-08-19

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