Chin. J. Semicond. > 1990, Volume 11 > Issue 1 > 14-19
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测定离子注入单晶损伤与应变的双晶(n~v,-n~v)排列方法

李润身 , H.K.Wagenfeld , J.S.Williams , Stephen Milkins and Andrew Stevenson

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    Received: 19 August 2015 Revised: Online: Published: 01 January 1990

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      Article Navigation >  Journal of Semiconductors  > 1990  >  11(1): 14-19
      李润身, H.K.Wagenfeld, J.S.Williams, Stephen Milkins, Andrew Stevenson. 测定离子注入单晶损伤与应变的双晶(n~v,-n~v)排列方法[J]. 半导体学报(英文版), 1990, 11(1): 14-19.
      Citation:
      李润身, H.K.Wagenfeld, J.S.Williams, Stephen Milkins, Andrew Stevenson. 测定离子注入单晶损伤与应变的双晶(n~v,-n~v)排列方法[J]. 半导体学报(英文版), 1990, 11(1): 14-19.
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      • Received Date: 2015-08-19

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