| Citation: |
Cai Shujun, Pan Hongshu, Chen Hao, Li Liang, Zhao Zhenping. S-Band 1mm SiC MESFET with 2W Output on Semi-Insulated SiC Substrate[J]. Journal of Semiconductors, 2006, 27(2): 266-269.
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Cai S J, Pan H S, Chen H, Li L, Zhao Z P. S-Band 1mm SiC MESFET with 2W Output on Semi-Insulated SiC Substrate[J]. Chin. J. Semicond., 2006, 27(2): 266.
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S-Band 1mm SiC MESFET with 2W Output on Semi-Insulated SiC Substrate
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Abstract
A SiC MESFET structure is successfully prepared on a semi-insulated 50mm SiC substrate using a hot-wall SiC reactor.The doping concentration for the channel layer is about 1.7×1017cm-3,and the thickness is about 0.35μm.An unintentionally n-doped buffer layer is employed between the substrate and the channel layer.A cap layer for Ohmic contact is doped to 1019cm-3.MESFET devices are fabricated using inductively coupled plasma etching and other conventional tools.Power devices with a 1mm gate width are measured and a 2W output at 2GHz is obtained.-
Keywords:
- MESFET,
- SiC,
- buffer layer,
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References
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Proportional views
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