Room Temperature Continuous Wave Quantum Well Lasers

Zhao Huan; Du Yun; Ni Haiqiao; Zhang Shiyong; Han Qin; Xu Yingqiang; Niu Zhichuan; Wu Ronghan

National Laboratory for Superlattices and Microstructures，Institute of Semiconductors， Chinese Academy of Sciences，Beijing 100083，China,National Laboratory for Superlattices and Microstructures，Institute of Semiconductors， Chinese Academy of Sciences，Beijing 100083，China,National Laboratory for Superlattices and Microstructures，Institute of Semiconductors， Chinese Academy of Sciences，Beijing 100083，China,National Laboratory for Superlattices and Microstructures，Institute of Semiconductors， Chinese Academy of Sciences，Beijing 100083，China,National Laboratory for Superlattices and Microstructures，Institute of Semiconductors， Chinese Academy of Sciences，Beijing 100083，China,National Laboratory for Superlattices and Microstructures，Institute of Semiconductors， Chinese Academy of Sciences，Beijing 100083，China,National Laboratory for Superlattices and Microstructures，Institute of Semiconductors， Chinese Academy of Sciences，Beijing 100083，China and National Laboratory for Superlattices and Microstructures，Institute of Semiconductors， Chinese Academy of Sciences，Beijing 100083，China

Article Navigation > Journal of Semiconductors > 2007 > 28(S1): 486-488

Zhao Huan, Du Yun, Ni Haiqiao, Zhang Shiyong, Han Qin, Xu Yingqiang, Niu Zhichuan, Wu Ronghan. Room Temperature Continuous Wave Quantum Well Lasers[J]. Journal of Semiconductors, 2007, 28(S1): 486-488. ****Zhao H, Du Y, Ni H Q, Zhang S Y, Han Q, Xu Y Q, Niu Z C, Wu R H. Room Temperature Continuous Wave Quantum Well Lasers[J]. Chin. J. Semicond., 2007, 28(S1): 486.

Citation:

Zhao Huan, Du Yun, Ni Haiqiao, Zhang Shiyong, Han Qin, Xu Yingqiang, Niu Zhichuan, Wu Ronghan. Room Temperature Continuous Wave Quantum Well Lasers[J]. Journal of Semiconductors, 2007, 28(S1): 486-488. ****

Zhao H, Du Y, Ni H Q, Zhang S Y, Han Q, Xu Y Q, Niu Z C, Wu R H. Room Temperature Continuous Wave Quantum Well Lasers[J]. Chin. J. Semicond., 2007, 28(S1): 486.

Citation:

Zhao H, Du Y, Ni H Q, Zhang S Y, Han Q, Xu Y Q, Niu Z C, Wu R H. Room Temperature Continuous Wave Quantum Well Lasers[J]. Chin. J. Semicond., 2007, 28(S1): 486.

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Room Temperature Continuous Wave Quantum Well Lasers

National Laboratory for Superlattices and Microstructures，Institute of Semiconductors， Chinese Academy of Sciences，Beijing 100083，China,National Laboratory for Superlattices and Microstructures，Institute of Semiconductors， Chinese Academy of Sciences，Beijing 100083，China,National Laboratory for Superlattices and Microstructures，Institute of Semiconductors， Chinese Academy of Sciences，Beijing 100083，China,National Laboratory for Superlattices and Microstructures，Institute of Semiconductors， Chinese Academy of Sciences，Beijing 100083，China,National Laboratory for Superlattices and Microstructures，Institute of Semiconductors， Chinese Academy of Sciences，Beijing 100083，China,National Laboratory for Superlattices and Microstructures，Institute of Semiconductors， Chinese Academy of Sciences，Beijing 100083，China,National Laboratory for Superlattices and Microstructures，Institute of Semiconductors， Chinese Academy of Sciences，Beijing 100083，China and National Laboratory for Superlattices and Microstructures，Institute of Semiconductors， Chinese Academy of Sciences，Beijing 100083，China

Received Date: 2016-05-27
Published Date: 2016-04-28

Abstract

Abstract

Investigations of in-situ and ex-situ annealing effects on GaInNAs(Sb)/GaNAs/GaAs quantum wells (Qws) laser diodes grown by molecular beam epitaxy are carried out systematically.The crystal quality of QWs can be improved effective. 1y by rapid thermal annealing.Few investigations were made for lasers especially at a wavelength of 1.55pm.The emission wavelength of those QWs lasers，which were grown by MBE using low growth rates and introducing in-situ annealing process during the growth,has been extended up over 1.55um. A 1.59um lasing of a GalnNAsSb/GaNAs/GaAs single quantum well laser diode is obtained under continuous current injection at room temperature.The threshold current density is 2.6kA/cm2.
- molecular beam epitaxy,
- rapid thermal annealing,
- quantum well

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