Chin. J. Semicond. > 1985, Volume 6 > Issue 3 > 236-244
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硅耗尽表面准二维系统室温电子隧道能谱

李志坚 , 周海平 and 马鑫荣

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    Received: 20 August 2015 Revised: Online: Published: 01 March 1985

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      Article Navigation >  Journal of Semiconductors  > 1985  >  6(3): 236-244
      李志坚, 周海平, 马鑫荣. 硅耗尽表面准二维系统室温电子隧道能谱[J]. 半导体学报(英文版), 1985, 6(3): 236-244.
      Citation:
      李志坚, 周海平, 马鑫荣. 硅耗尽表面准二维系统室温电子隧道能谱[J]. 半导体学报(英文版), 1985, 6(3): 236-244.
      shu

      • Received Date: 2015-08-20

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