Chin. J. Semicond. > 1998, Volume 19 > Issue 6 > 413-416
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InAs薄膜Hall器件的材料生长与特性研究

王红梅 , 曾一平 , 周宏伟 , 董建荣 , 潘栋 , 潘量 and 孔梅影

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    Received: 18 August 2015 Revised: Online: Published: 01 June 1998

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      Article Navigation >  Journal of Semiconductors  > 1998  >  19(6): 413-416
      王红梅, 曾一平, 周宏伟, 董建荣, 潘栋, 潘量, 孔梅影. InAs薄膜Hall器件的材料生长与特性研究[J]. 半导体学报(英文版), 1998, 19(6): 413-416.
      Citation:
      王红梅, 曾一平, 周宏伟, 董建荣, 潘栋, 潘量, 孔梅影. InAs薄膜Hall器件的材料生长与特性研究[J]. 半导体学报(英文版), 1998, 19(6): 413-416.
      shu

      • Received Date: 2015-08-18

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