HfO_2 Gate Dielectrics for Future Generation of CMOS Device Application

H Y Yu , J F Kang , Ren Chi , M F Li and D L Kwong

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Received: 19 August 2015 Revised: Online: Published: 01 October 2004

Article Navigation > Journal of Semiconductors > 2004 > 25(10): 1193-1204

H Y Yu, J F Kang, Ren Chi, M F Li, D L Kwong. HfO_2 Gate Dielectrics for Future Generation of CMOS Device Application[J]. 半导体学报(英文版), 2004, 25(10): 1193-1204.

Citation:

H Y Yu, J F Kang, Ren Chi, M F Li, D L Kwong. HfO_2 Gate Dielectrics for Future Generation of CMOS Device Application[J]. 半导体学报(英文版), 2004, 25(10): 1193-1204.

H Y Yu, J F Kang, Ren Chi, M F Li, D L Kwong. HfO_2 Gate Dielectrics for Future Generation of CMOS Device Application[J]. 半导体学报(英文版), 2004, 25(10): 1193-1204.

Citation:

H Y Yu, J F Kang, Ren Chi, M F Li, D L Kwong. HfO_2 Gate Dielectrics for Future Generation of CMOS Device Application[J]. 半导体学报(英文版), 2004, 25(10): 1193-1204.

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