Chin. J. Semicond. > 2001, Volume 22 > Issue 1 > 40-46
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GSMBE生长 1.8- 2.0μm波段In Ga As/ In Ga As P应变量子阱激光器

柏劲松 , 方祖捷 , 张云妹 , 张位在 , 陈高庭 , 李爱珍 and 陈建新

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Key words: GSMBE, 中红外波段, 应变量子阱激光器

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    Received: 19 August 2015 Revised: Online: Published: 01 January 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(1): 40-46
      柏劲松, 方祖捷, 张云妹, 张位在, 陈高庭, 李爱珍, 陈建新. GSMBE生长 1.8- 2.0μm波段In Ga As/ In Ga As P应变量子阱激光器[J]. 半导体学报(英文版), 2001, 22(1): 40-46.
      Citation:
      柏劲松, 方祖捷, 张云妹, 张位在, 陈高庭, 李爱珍, 陈建新. GSMBE生长 1.8- 2.0μm波段In Ga As/ In Ga As P应变量子阱激光器[J]. 半导体学报(英文版), 2001, 22(1): 40-46.
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      • Received Date: 2015-08-19

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