Citation: |
Wang Lixin, Liao Taiyi, Lu Jiang. Development of a Stripe Gate Power MOSFET[J]. Journal of Semiconductors, 2006, 27(S1): 205-207.
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Wang L X, Liao T Y, Lu J. Development of a Stripe Gate Power MOSFET[J]. Chin. J. Semicond., 2006, 27(13): 205.
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Development of a Stripe Gate Power MOSFET
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Abstract
A new planar stripe gate power MOSFET is developed.It has a lower RDS(ON),a higher switch speed and better operation stability compared to traditional cell design.Its manufacture flow is also presented,which is simple and practicable.-
Keywords:
- stripe gate,
- VDMOS,
- power MOSFET
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References
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Proportional views