Chin. J. Semicond. > 1982, Volume 3 > Issue 3 > 233-237
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磷化铟与氧化膜界面物理性质的研究

陈克铭 , 仇兰华 , 崔玉德 , 陈维德 and 简萍清

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    Received: 20 August 2015 Revised: Online: Published: 01 March 1982

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      Article Navigation >  Journal of Semiconductors  > 1982  >  3(3): 233-237
      陈克铭, 仇兰华, 崔玉德, 陈维德, 简萍清. 磷化铟与氧化膜界面物理性质的研究[J]. 半导体学报(英文版), 1982, 3(3): 233-237.
      Citation:
      陈克铭, 仇兰华, 崔玉德, 陈维德, 简萍清. 磷化铟与氧化膜界面物理性质的研究[J]. 半导体学报(英文版), 1982, 3(3): 233-237.
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      • Received Date: 2015-08-20

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