Chin. J. Semicond. > 2004, Volume 25 > Issue 10 > 1221-1226
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应用400℃低温Si技术制备应变Si沟道pMOSFET(英文)

梅丁蕾 , 杨谟华 , 李竞春 , 于奇 , 张静 , 徐婉静 and 谭开洲

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Key words: 锗硅, 低温硅, 弛豫, 线位错

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    Received: 19 August 2015 Revised: Online: Published: 01 October 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(10): 1221-1226
      梅丁蕾, 杨谟华, 李竞春, 于奇, 张静, 徐婉静, 谭开洲. 应用400℃低温Si技术制备应变Si沟道pMOSFET(英文)[J]. 半导体学报(英文版), 2004, 25(10): 1221-1226.
      Citation:
      梅丁蕾, 杨谟华, 李竞春, 于奇, 张静, 徐婉静, 谭开洲. 应用400℃低温Si技术制备应变Si沟道pMOSFET(英文)[J]. 半导体学报(英文版), 2004, 25(10): 1221-1226.
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      • Received Date: 2015-08-19

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