Chin. J. Semicond. > 1994, Volume 15 > Issue 1 > 35-39
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铍注入锑化铟快速热退火的研究

张廷庆，刘家璐

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    Received: 18 August 2015 Revised: Online: Published: 01 January 1994

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      Article Navigation >  Journal of Semiconductors  > 1994  >  15(1): 35-39
      张廷庆，刘家璐. 铍注入锑化铟快速热退火的研究[J]. 半导体学报(英文版), 1994, 15(1): 35-39.
      Citation:
      张廷庆，刘家璐. 铍注入锑化铟快速热退火的研究[J]. 半导体学报(英文版), 1994, 15(1): 35-39.
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      • Received Date: 2015-08-18

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