Chin. J. Semicond. > 2004, Volume 25 > Issue 4 > 415-418
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腐蚀坑处氮化镓二次MOCVD外延生长的特性

陆敏 , 方慧智 , 陆曙 , 黎子兰 , 杨华 , 章蓓 and 张国义

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Key words: MOCVD, GaN, 穿透位错

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    Received: 19 August 2015 Revised: Online: Published: 01 April 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(4): 415-418
      陆敏, 方慧智, 陆曙, 黎子兰, 杨华, 章蓓, 张国义. 腐蚀坑处氮化镓二次MOCVD外延生长的特性[J]. 半导体学报(英文版), 2004, 25(4): 415-418.
      Citation:
      陆敏, 方慧智, 陆曙, 黎子兰, 杨华, 章蓓, 张国义. 腐蚀坑处氮化镓二次MOCVD外延生长的特性[J]. 半导体学报(英文版), 2004, 25(4): 415-418.
      shu

      • Received Date: 2015-08-19

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