Chin. J. Semicond. > 2002, Volume 23 > Issue 3 > 276-279
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含磷组分薄膜对InGaAsP/InP多量子阱无序处理的影响

王永晨 , 张晓丹 , 赵杰 , 殷景志 , 杨树人 and 张淑云

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Key words: 量子阱混合互扩, 无杂质空位扩散, 等离子体增强化学气相淀积

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    Received: 19 August 2015 Revised: Online: Published: 01 March 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(3): 276-279
      王永晨, 张晓丹, 赵杰, 殷景志, 杨树人, 张淑云. 含磷组分薄膜对InGaAsP/InP多量子阱无序处理的影响[J]. 半导体学报(英文版), 2002, 23(3): 276-279.
      Citation:
      王永晨, 张晓丹, 赵杰, 殷景志, 杨树人, 张淑云. 含磷组分薄膜对InGaAsP/InP多量子阱无序处理的影响[J]. 半导体学报(英文版), 2002, 23(3): 276-279.
      shu

      • Received Date: 2015-08-19

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