Chin. J. Semicond. > 2001, Volume 22 > Issue 10 > 1274-1276
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含N超薄栅氧化层的击穿特性

韩德栋 , 张国强 and 任迪远

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Key words: 含N, 超薄栅氧化层, 击穿特性

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    Received: 20 August 2015 Revised: Online: Published: 01 October 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(10): 1274-1276
      韩德栋, 张国强, 任迪远. 含N超薄栅氧化层的击穿特性[J]. 半导体学报(英文版), 2001, 22(10): 1274-1276.
      Citation:
      韩德栋, 张国强, 任迪远. 含N超薄栅氧化层的击穿特性[J]. 半导体学报(英文版), 2001, 22(10): 1274-1276.
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      • Received Date: 2015-08-20

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