| Citation: |
Song Jianjun, Zhang Heming, Dai Xianying, Hu Huiyong, Xuan Rongxi. Band Edge Model of (101)-Biaxial Strained Si[J]. Journal of Semiconductors, 2008, 29(9): 1670-1673.
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Song J J, Zhang H M, Dai X Y, Hu H Y, Xuan R X. Band Edge Model of (101)-Biaxial Strained Si[J]. J. Semicond., 2008, 29(9): 1670.
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Band Edge Model of (101)-Biaxial Strained Si
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Abstract
A band edge model in (101)-biaxial strained Si on relaxed Si1-xGex alloy,or monoclinic Si (m-Si),is presented using the k·p perturbation method coupled with deformation potential theory.Results show that the ［001］,［001］,［100］,［100］ valleys constitute the conduction band (CB) edge,which moves up in electron energy as the Ge fraction (x) increases.Furthermore,the CB splitting energy is in direct proportion to x and all the valence band (VB) edges move up in electron energy as x increases.In addition,the decrease in the indirect bandgap and the increase in the VB edge splitting energy as x increases are found.The quantitative data from the models supply valuable references for the design of the devices.-
Keywords:
- strained Si,
- band edge,
- k·pmethod
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References
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Proportional views
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