| Citation: |
Wang Chao, Zhang Yimen, Zhang Yuming, Guo Hui, Xu Daqing, Wang Yuehu. Formation of Nickel Based Ohmic Contact to High Energy Vanadium Implanted n-Type 4H-SiC[J]. Journal of Semiconductors, 2007, 28(11): 1701-1705.
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Wang C, Zhang Y M, Zhang Y M, Guo H, Xu D Q, Wang Y H. Formation of Nickel Based Ohmic Contact to High Energy Vanadium Implanted n-Type 4H-SiC[J]. Chin. J. Semicond., 2007, 28(11): 1701.
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Formation of Nickel Based Ohmic Contact to High Energy Vanadium Implanted n-Type 4H-SiC
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Abstract
The diffusion behavior of vanadium (V) implanted in SiC is investigated by secondary ion mass spectrometry.Significant redistribution,especially out-diffusion of vanadium towards the sample surface, is not observed after 1650℃ annealing.Higher carrier concentration is obtained due to a lack of compensation of vanadium in the surface region.The electrical characteristics of Ni contacts to V-implanted n-type 4H-SiC are investigated using a linear transmission line method.A specific contact resistance as low as 4.4e-3Ω·cm2 is achieved after annealing at 1050℃ for 10min in gas ambient consisting of 90% N2 and 10% H2.X-ray diffraction analysis shows the formation of Ni2Si and graphite phase at the interface after annealing.This provides the evidence that the carbon vacancies,resulting from the out-diffusion of carbon atoms from SiC,contribute to the formation of ohmic contact through the reduction of effective Schottky barrier height for the transport of electrons. -
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