Abstract:

In order to avoid many scratches on copper surface caused by hard mechanical alumina abrasives in Cu CMP process, a new Cu CMP slurry is introduced in which organic amine is used for complex agent and colloidal silica (SiO₂) is used for abrasive particles.According to mechanism of strong complex, the issuses that copper layer is removed slowly by colloidal silica and silicon glue generates in solution are solved. The experimental result shows that the slurry is suitable for the first polishing of Cu CMP process with faster removal rate of Cu and high selectivity between Cu/Ta/SiO₂.

Key words: copper interconnection, CMP, slurry