Chin. J. Semicond. > 2003, Volume 24 > Issue 2 > 127-132
|

CONTENTS

直接隧穿应力下超薄栅氧化层中的多缺陷产生行为(英文)

霍宗亮 , 毛凌锋 , 谭长华 and 许铭真

+ Author Affiliations

PDF

Key words: 缺陷, MOS结构, 时变击穿

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2118 Times PDF downloads: 763 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 February 2003

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2003  >  24(2): 127-132
      霍宗亮, 毛凌锋, 谭长华, 许铭真. 直接隧穿应力下超薄栅氧化层中的多缺陷产生行为(英文)[J]. 半导体学报(英文版), 2003, 24(2): 127-132.
      Citation:
      霍宗亮, 毛凌锋, 谭长华, 许铭真. 直接隧穿应力下超薄栅氧化层中的多缺陷产生行为(英文)[J]. 半导体学报(英文版), 2003, 24(2): 127-132.
      shu

      • Received Date: 2015-08-20

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return