Chin. J. Semicond. > 2007, Volume 28 > Issue S1 > 579-582

Effect of Mesa Structures on the Responsivities of 4H-SiC Photodetectors

Liu Xingfang, Sun Guosheng, Li Jinmin, Zhao Yongmei, Ning Jin, Wang Lei, Zhao Wanshun, Luo Muchang, Li Jiaye and Zeng Yiping

+ Author Affiliations

PDF

Abstract: Four types of 4H.SiC photodetectors,#1,#2,#3 and#4,with different mesa structures in the area of the opti· cal window have been fabricated and characterized by the photoresponse spectra.The vertical photodetectors were based on 4H.SiC homoepilayers.The optical window of photodetector#1 consisted of a transparent Pt layer and a P+/p/n-layer up, on the n+substate;and that of photodetector#2,#3 and #4 consisted of a P+/p/n-layer,a p/n-layer and a n-layer,respectively.The photoresponse results showed that the best ultraviolet photoresponsiVity was of the photodetector #2,with at least an order of magnitude higher than that of the other three types of photodetectors.It also showed that the wavelength of the peak value varied according to mesa structures,and the wavelengths were 341nm,312nm,305nm and 297nm for photode· tector#1,#2,#3 and #4,respectively.

Key words: 4H·SiCultraviolet photodetectormesa structures

1

Vertical Schottky ultraviolet photodetector based on graphene and top–down fabricated GaN nanorod arrays

Xuemin Zhang, Changling Yan, Jinghang Yang, Chao Pang, Yunzhen Yue, et al.

Journal of Semiconductors, 2022, 43(6): 062804. doi: 10.1088/1674-4926/43/6/062804

2

Strain effect on intersubband transitions in rolled-up quantum well infrared photodetectors

Han Wang, Shilong Li, Honglou Zhen, Xiaofei Nie, Gaoshan Huang, et al.

Journal of Semiconductors, 2017, 38(5): 054006. doi: 10.1088/1674-4926/38/5/054006

3

Photodetectors based on two dimensional materials

Zheng Lou, Zhongzhu Liang, Guozhen Shen

Journal of Semiconductors, 2016, 37(9): 091001. doi: 10.1088/1674-4926/37/9/091001

4

A simulation of doping and trap effects on the spectral response of AlGaN ultraviolet detectors

Sidi Ould Saad Hamady

Journal of Semiconductors, 2012, 33(3): 034002. doi: 10.1088/1674-4926/33/3/034002

5

N+P photodetector characterization using the quasi-steady state photoconductance decay method

Omeime Xerviar Esebamen

Journal of Semiconductors, 2012, 33(12): 123002. doi: 10.1088/1674-4926/33/12/123002

6

Ohmic contact behaviour of Co/C/4H-SiC structures

Wang Yongshun, Liu Chunjuan, Gu Shengjie, Zhang Caizhen

Journal of Semiconductors, 2011, 32(4): 044003. doi: 10.1088/1674-4926/32/4/044003

7

Two-dimensional numerical computation of the structure-dependent spectral response in a 4H-SiC metal–semiconductor–metal ultraviolet photodetector with consideration of reflection and absorption on contact electrodes

Chen Bin, Yang Yintang, Chai Changchun, Song Kun, Ma Zhenyang, et al.

Journal of Semiconductors, 2011, 32(8): 084001. doi: 10.1088/1674-4926/32/8/084001

8

First-principles of wurtzite ZnO (0001) and (000ī) surface structures

Zhang Yufei, Guo Zhiyou, Gao Xiaoqi, Cao Dongxing, Dai Yunxiao, et al.

Journal of Semiconductors, 2010, 31(8): 082001. doi: 10.1088/1674-4926/31/8/082001

9

Design consideration of the thermal and electro stability of multi-finger HBTs based on different device structures

Chen Yanhu, Shen Huajun, Liu Xinyu, Xu Hui, Li Ling, et al.

Journal of Semiconductors, 2010, 31(10): 104003. doi: 10.1088/1674-4926/31/10/104003

10

InP/InGaAs heterojunction bipolar transistors with different μ-bridge structures

Yu Jinyong, Liu Xinyu, Xia Yang

Journal of Semiconductors, 2009, 30(11): 114001. doi: 10.1088/1674-4926/30/11/114001

11

Facile fabrication of UV photodetectors based on ZnO nanorod networks across trenched electrodes

Li Yingying, Cheng Chuanwei, Dong Xiang, Gao Junshan, Zhang Haiqian, et al.

Journal of Semiconductors, 2009, 30(6): 063004. doi: 10.1088/1674-4926/30/6/063004

12

An AlGaN-Based Resonant-Cavity-Enhanced p-i-n Ultraviolet Photodetector

Ji Xiaoli, Jiang Ruolian, Zhou Jianjun, Liu Bin, Xie Zili, et al.

Chinese Journal of Semiconductors , 2007, 28(12): 1957-1960.

13

Separate Absorption and Multiplication 4H-SiC UltravioletAvalanche Photodetector

Zhu Huili, Chen Xiaping, Wu Zhengyun

Chinese Journal of Semiconductors , 2007, 28(2): 284-288.

14

MSM Ultraviolet Photodetector of Mg0.2Zn0.8O by LMBE

Bi Zhen, Zhang Jingwen, Bian Xuming, Wang Dong, Zhang Xin'+C143an, et al.

Chinese Journal of Semiconductors , 2007, 28(8): 1242-1247.

15

Epitaxial Growth of 4H-SiC MESFET Structures

Li Zheyang, Dong Xun, Bai Song, Chen Gang, Chen Tangsheng, et al.

Chinese Journal of Semiconductors , 2007, 28(S1): 379-381.

16

Effect of Relaxation Time on Electron Transport Properties in Double-Barrier Structures

Dai Zhenhong, Ni Jun

Chinese Journal of Semiconductors , 2006, 27(4): 604-608.

17

High Quality Ultraviolet Photodetectors Based on Silicon Carbide

Huang Limin, Xie Jiachun, Liang Jin

Chinese Journal of Semiconductors , 2005, 26(S1): 256-260.

18

Anealing Effect on Cu/ Ni/4H-SiC Schottky Barrier

Yang Weifeng, Yang Keqin, Chen Xiaping, Zhang Feng, Wang Liangjun, et al.

Chinese Journal of Semiconductors , 2005, 26(S1): 277-280.

19

High-Integrated-Photosensitivity Negative-Electron-Affinity GaAs Photocathodes with Multilayer Be-Doping Structures

Wang Xiaofeng, Zeng Yiping, Wang Baoqiang, Zhu Zhanping, Du Xiaoqing, et al.

Chinese Journal of Semiconductors , 2005, 26(9): 1692-1698.

20

Fabrication of 1.55μm Si-Based Resonant Cavity Enhanced Photodetectors

Mao Rongwei, Zuo Yuhua, Li Chuanbo, Cheng Buwen, Teng Xuegong, et al.

Chinese Journal of Semiconductors , 2005, 26(2): 271-275.

  • Search

    Advanced Search >>

    GET CITATION

    Liu Xingfang, Sun Guosheng, Li Jinmin, Zhao Yongmei, Ning Jin, Wang Lei, Zhao Wanshun, Luo Muchang, Li Jiaye, Zeng Yiping. Effect of Mesa Structures on the Responsivities of 4H-SiC Photodetectors[J]. Journal of Semiconductors, 2007, 28(S1): 579-582.
    Liu X F, Sun G S, Li J M, Zhao Y M, Ning J, Wang L, Zhao W S, Luo M C, Li J Y, Zeng Y P. Effect of Mesa Structures on the Responsivities of 4H-SiC Photodetectors[J]. Chin. J. Semicond., 2007, 28(S1): 579.
    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 1989 Times PDF downloads: 330 Times Cited by: 0 Times

    History

    Received: 27 May 2016 Revised: Online: Published: 01 January 2007

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Liu Xingfang, Sun Guosheng, Li Jinmin, Zhao Yongmei, Ning Jin, Wang Lei, Zhao Wanshun, Luo Muchang, Li Jiaye, Zeng Yiping. Effect of Mesa Structures on the Responsivities of 4H-SiC Photodetectors[J]. Journal of Semiconductors, 2007, 28(S1): 579-582. ****Liu X F, Sun G S, Li J M, Zhao Y M, Ning J, Wang L, Zhao W S, Luo M C, Li J Y, Zeng Y P. Effect of Mesa Structures on the Responsivities of 4H-SiC Photodetectors[J]. Chin. J. Semicond., 2007, 28(S1): 579.
      Citation:
      Liu Xingfang, Sun Guosheng, Li Jinmin, Zhao Yongmei, Ning Jin, Wang Lei, Zhao Wanshun, Luo Muchang, Li Jiaye, Zeng Yiping. Effect of Mesa Structures on the Responsivities of 4H-SiC Photodetectors[J]. Journal of Semiconductors, 2007, 28(S1): 579-582. ****
      Liu X F, Sun G S, Li J M, Zhao Y M, Ning J, Wang L, Zhao W S, Luo M C, Li J Y, Zeng Y P. Effect of Mesa Structures on the Responsivities of 4H-SiC Photodetectors[J]. Chin. J. Semicond., 2007, 28(S1): 579.

      Effect of Mesa Structures on the Responsivities of 4H-SiC Photodetectors

      • Received Date: 2016-05-27
      • Published Date: 2016-04-28

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return