| Citation: |
Li Jianheng, Zhang Shilin, Guo Weilian, Qi Haitao, Liang Huilai, Mao Luhong. Fabrication and Simulation of NDRHBT[J]. Journal of Semiconductors, 2005, 26(12): 2416-2421.
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Li J H, Zhang S L, Guo W L, Qi H T, Liang H L, Mao L H. Fabrication and Simulation of NDRHBT[J]. Chin. J. Semicond., 2005, 26(12): 2416.
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Fabrication and Simulation of NDRHBT
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Abstract
A thin base (8nm) InGaP/GaAs dual heterojunction material is grown by MBE and a heterojunction bipolar transistor (HBT) with negative differential resistance (NDR) is fabricated.The NDR is observed at constant voltage and current.A physical analysis of this device is presented.The physical I_C-V_CE formulas are derived and the relation between the NDR and the structure and parameters of this device is discussed.The circuit net list model is compiled by PSPICE including the I_C-V_CE formulas and the simulated result is close to the measured outcome. -
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