Chin. J. Semicond. > 2003, Volume 24 > Issue 9 > 977-982
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具有电阻场板的薄膜SOI-LDMOS的精确解析

杨洪强 , 郭丽娜 , 郭超 , 韩磊 and 陈星弼

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Key words: SOI, 电阻场板, 横向双扩散MOS管, 埋氧层, 电离率, 击穿电压, 比导通电阻

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    Received: 20 August 2015 Revised: Online: Published: 01 September 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(9): 977-982
      杨洪强, 郭丽娜, 郭超, 韩磊, 陈星弼. 具有电阻场板的薄膜SOI-LDMOS的精确解析[J]. 半导体学报(英文版), 2003, 24(9): 977-982.
      Citation:
      杨洪强, 郭丽娜, 郭超, 韩磊, 陈星弼. 具有电阻场板的薄膜SOI-LDMOS的精确解析[J]. 半导体学报(英文版), 2003, 24(9): 977-982.
      shu

      • Received Date: 2015-08-20

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