Chin. J. Semicond. > 2004, Volume 25 > Issue 12 > 1690-1694
|

CONTENTS

高可靠性P-LDMOS研究

孙智林 , 孙伟锋 , 易扬波 and 陆生礼

+ Author Affiliations

PDF

Key words: LDMOS, 沟道, 峰值电场, 热载流子效应

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2399 Times PDF downloads: 1285 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 December 2004

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2004  >  25(12): 1690-1694
      孙智林, 孙伟锋, 易扬波, 陆生礼. 高可靠性P-LDMOS研究[J]. 半导体学报(英文版), 2004, 25(12): 1690-1694.
      Citation:
      孙智林, 孙伟锋, 易扬波, 陆生礼. 高可靠性P-LDMOS研究[J]. 半导体学报(英文版), 2004, 25(12): 1690-1694.
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return