Chin. J. Semicond. > 2007, Volume 28 > Issue 6 > 984-988
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High Temperature Characteristics of Ti/Al/Ni/Au Multilayer Ohmic Contact to n-GaN

Zhang Yuezong, Feng Shiwei, Zhang Gongchang, Wang Chengdong and Lü Changzhi

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Abstract: The high temperature characteristics of the ohmic contact of Ti/Al/Ni/Au (15nm/220nm/40nm/50nm) multilayer contacts to n-type GaN(Nd=3.7e17cm-3,Nd=3.0e18cm-3) are studied.The annealed samples still show excellent ohmic contact characteristics at 500℃.Contact resistivity increases with the rise of temperature.Furthermore,the tendency of increase is related to doping concentration:The higher the doping concentration,the slower the increase of the contact resistivity with the temperature.Ti/Al/Ni/Au ohmic contact to heavy doping n-GaN has better high temperature reliability.The contact resistivity shows unrecoverable characteristics after the samples are placed under the thermal stress.

Key words: ohmic contact, specific contact resistivity, annealing, high temperature

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    Received: 18 August 2015 Revised: 28 December 2006 Online: Published: 01 June 2007

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      Article Navigation >  Journal of Semiconductors  > 2007  >  28(6): 984-988
      Zhang Yuezong, Feng Shiwei, Zhang Gongchang, Wang Chengdong, Lü Changzhi. High Temperature Characteristics of Ti/Al/Ni/Au Multilayer Ohmic Contact to n-GaN[J]. Journal of Semiconductors, 2007, 28(6): 984-988. ****Zhang Y Z, Feng S W, Zhang G C, Wang C D, Lü C. High Temperature Characteristics of Ti/Al/Ni/Au Multilayer Ohmic Contact to n-GaN[J]. Chin. J. Semicond., 2007, 28(6): 984.
      Citation:
      Zhang Yuezong, Feng Shiwei, Zhang Gongchang, Wang Chengdong, Lü Changzhi. High Temperature Characteristics of Ti/Al/Ni/Au Multilayer Ohmic Contact to n-GaN[J]. Journal of Semiconductors, 2007, 28(6): 984-988. ****
      Zhang Y Z, Feng S W, Zhang G C, Wang C D, Lü C. High Temperature Characteristics of Ti/Al/Ni/Au Multilayer Ohmic Contact to n-GaN[J]. Chin. J. Semicond., 2007, 28(6): 984.
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      High Temperature Characteristics of Ti/Al/Ni/Au Multilayer Ohmic Contact to n-GaN

      • School of Electronic Information and Control Engineering,Beijing University of Technology,Beijing 100022,China

      • School of Electronic Information and Control Engineering,Beijing University of Technology,Beijing 100022,China

      • School of Electronic Information and Control Engineering,Beijing University of Technology,Beijing 100022,China

      • School of Electronic Information and Control Engineering,Beijing University of Technology,Beijing 100022,China

      • School of Electronic Information and Control Engineering,Beijing University of Technology,Beijing 100022,China

      • Received Date: 2015-08-18
      • Accepted Date: 2006-10-12
      • Revised Date: 2006-12-28
      • Published Date: 2007-05-30

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